High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

A relatively large sample of gallium nitride (GaN) was grown as a single crystal using the hydride vapor phase epitaxy (HVPE) process. The thermal diffusivity of the single crystal has been measured using a vertical-type laser flash method. The thermal expansion was measured using a dilatometer in o... View More