600 V Diamond Junction Field-Effect Transistors Operated at 200$^{\circ}{\rm C}$

Iwasaki, Takayuki; Yaita, Junya; Kato, Hiromitsu; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Okushi, Hideyo; Yamasaki, Satoshi; Hatano, Mutsuko

doi:10.1109/led.2013.2294969

Public

600 V Diamond Junction Field-Effect Transistors Operated at 200$^{\circ}{\rm C}$

Published in IEEE Electron Device Letters • Jan 31, 2014

Authors:

Takayuki Iwasaki

Junya Yaita

Hiromitsu Kato

Abstract

Blocking characteristics of diamond junction field-effect transistors were evaluated at room temperature (RT) and 200 ° C. A high source-drain bias (breakdown voltage) of 566 V was recorded at RT, whereas it increased to 608 V at 200 ° C. The positive temperature coefficient of the breakdown voltage...

Subject

Diamond

Field-effect transistor

Transistor

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