Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling &amp;#x223C; Atomic level analysis of Pt/B/As distribution within silicide films &amp;#x223C;

Sonehara, Takeshi; Hokazono, A.; Akutsu, Haruko; Sasaki, Tomokazu; Uchida, Hiroshi; Tomita, Mitsuhiro; Tsujii, Hideji; Kawanaka, Shigeru; Inaba, S.; Toyoshima, Y.

doi:10.1109/iedm.2008.4796851

Public

Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling ∼ Atomic level analysis of Pt/B/As distribution within silicide films ∼

Shared by NobleBlocks on Dec 1, 2008 • 12:00 AM UTC

Authors:

Takeshi Sonehara

A. Hokazono

Haruko Akutsu

Abstract

Platinum (Pt)-incorporation into nickel silicide films is the promising approach to reduce the contact resistance (R C ) at silicide/Si interface. Physical properties of Ni 1-x Pt x Si films were investigated by using local electrode atom probe (LEAP); The distributions of Pt and dopants (such as As...

Subject

Silicide

Materials science

Contact resistance

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