Bias‐Stress‐Induced Charge Trapping at Polymer Chain Ends of Polymer Gate‐Dielectrics in Organic Transistors

Abstract Herein is demonstrated that the polymer chain ends of polymer gate‐ dielectrics (PGDs) in organic field‐effect transistors (OFETs) can trap charges; the bias‐stress stability is reduced without changes in the mobilities of the transistor devices as well as the morphologies of the organic se... View More