Gd x Hf 1 − x O y thin films were deposited by atomic layer deposition (ALD) using tris(isopropyl-cyclopentadienyl) gadolinium [ Gd ( P i rCp ) 3 ] and HfCl 4 in combination with H 2 O as an oxidizer. Growth curves showed a nearly ideal ALD behavior. The growth per individual Gd ( P i rCp ) 3 / H 2 ...
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