Lattice Effects on the Magnetoresistance in Doped LaMn<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Y. Hwang, H.; Cheong, S-W.; G. Radaelli, P.; Marezio, M.; Batlogg, B.

doi:10.1103/physrevlett.75.914

Public

Lattice Effects on the Magnetoresistance in Doped LaMnO3

Published in Physical Review Letters • Jul 31, 1995

Authors:

H. Y. Hwang

S-W. Cheong

P. G. Radaelli

Abstract

A detailed study of doped LaMn${\mathrm{O}}_{3}$ with fixed carrier concentration reveals a direct relationship between the Curie temperature ${T}_{c}$ and the average ionic radius of the La site $〈{r}_{A}〉$, which is varied by substituting different rare earth ions for La. With decreasing $〈{r}_{A}...

Subject

Ionic radius

Magnetoresistance

Curie temperature

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