We have studied the laterally seeded regrowth of polycrystalline Si film over SiO2 islands through the use of a very narrow strip electron beam of a high-energy density. A 0.5-μm polycrystalline Si film was deposited over the entire surface of wafers on which SiO2 islands, 30–100 μm wide and 2 cm lo...
No comments yet
Be the first to share your thoughts!