Decoupling the Bias‐Stress‐Induced Charge Trapping in Semiconductors and Gate‐Dielectrics of Organic Transistors Using a Double Stretched‐Exponential Formula

Abstract A novel strategy for analyzing bias‐stress effects in organic field‐effect transistors (OFETs) based on a four‐parameter double stretched‐exponential formula is reported. The formula is obtained by modifying a traditional single stretched‐exponential expression comprising two parameters (a ... View More