Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

In this letter, we investigated the behaviors of surface- and buffer-induced current collapse in AlGaN/GaN high-electron mobility transistors (HEMTs) using a soft-switched pulsed\(I-V\)measurement with different quiescent bias points. It is found that the surface- and buffer-related current collapse... View More