Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

We have derived consistent sets of band parameters (band gaps, crystal field splittings, band-gap deformation potentials, effective masses, and Luttinger and ${E}_{P}$ parameters) for AlN, GaN, and InN in the zinc-blende and wurtzite phases employing many-body perturbation theory in the ${G}_{0}{W}_... View More