Why Multilayer Graphene on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext mathvariant="normal">−</mml:mtext><mml:mi>SiC</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>000</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mo stretchy="false">)</mml:mo></mml:math>Behaves Like a Single Sheet of Graphene

Hass, Joanna; Varchon, F.; E. Millán-Otoya, J.; Sprinkle, M.; Sharma, Nidhi; A. de Heer, Walt; Berger, Claire; N. First, Phillip; Magaud, L.; H. Conrad, E.

doi:10.1103/physrevlett.100.125504

Public

Why Multilayer Graphene on4H−SiC(0001¯)Behaves Like a Single Sheet of Graphene

Published in Physical Review Letters • Mar 28, 2008

Authors:

Joanna Hass

F. Varchon

J. E. Millán-Otoya

Abstract

We show experimentally that multilayer graphene grown on the carbon terminated SiC(0001[over ]) surface contains rotational stacking faults related to the epitaxial condition at the graphene-SiC interface. Via first-principles calculation, we demonstrate that such faults produce an electronic struct...

Subject

Graphene

Materials science

Stacking

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