Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb–15at.% Ge

We present evidence for the instability in the crystalline (metallic) state of binary Te-free phase-change Ge–Sb thin films considered for integration into nonvolatile nanosized memory cells. We find that while the amorphous (semiconducting) phase of eutectic Sb–15at.% Ge is very robust until Sb cry... View More