Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

M. Lee, Y.; Hayakawa, J.; Ikeda, Shoji; Matsukura, F.; Ohno, Hideo

doi:10.1063/1.2742576

Public

Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

Published in Applied Physics Letters • May 21, 2007

Authors:

Y. M. Lee

J. Hayakawa

Shoji Ikeda

Abstract

The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (CoxFe100−x)80B20∕MgO∕(CoxFe100−x)80B20 pseudo-spin-valve magnetic tunnel junctions (MTJs). TMR ratio is found to strongly depend on the composition and thicknesses of CoFeB. High resolution tr...

Subject

Tunnel magnetoresistance

Annealing (glass)

Materials science

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