Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

Ikeda, Shoji; Hayakawa, Jun; Ashizawa, Yoshito; M. Lee, Y.; Miura, K.; Hasegawa, H.; Tsunoda, Masakiyo; Matsukura, F.; Ohno, Hideo

doi:10.1063/1.2976435

Public

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

Published in Applied Physics Letters • Aug 25, 2008

Authors:

Shoji Ikeda

Jun Hayakawa

Yoshito Ashizawa

Abstract

The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕Co20Fe60B20∕Ta pseudo-spin-valve magnetic tunnel junction annealed at 525°C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500°C, while suppressing the ...

Subject

Materials science

Annealing (glass)

Tunnel magnetoresistance

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