Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)

The principal reconstructions found on the low-index planes of GaAs and ZnSe can be explained in terms of a simple electron counting model. A surface structure satisfies this model if it is possible to have all the dangling bonds on the electropositive element (Ga or Zn) empty and the dangling bonds... View More