Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy

Columnar GaN nanostructures (GaN nanocolumns) were grown on Al 2 O 3 (0001) by RF-radical source molecular beam epitaxy (RF-MBE) through a self-organization process. The nanocolumns were grown at high density, with the c -axis maintained perpendicular to the substrate surface. The dependence of colu... View More