Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

Xu, Zhen; Houssa, Michel; De Gendt, Stefan; Heyns, Marc

doi:10.1063/1.1435411

Public

Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

Published in Applied Physics Letters • Mar 18, 2002

Authors:

Zhen Xu

Michel Houssa

Stefan De Gendt

Abstract

A strong polarity effect on the temperature dependence of the leakage current in TiN/HfO2/SiO2/Si capacitors is reported. A model is proposed to explain these experimental results that combines tunneling through the stack and Frenkel–Poole hopping in the HfO2 layer, depending on the value of the gat...

Subject

Polarity (international relations)

Materials science

Quantum tunnelling

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