Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory

Van den bosch, G.; Sankar Kar, Gouri; Blomme, Pieter; Arreghini, A.; Cacciato, A.; Breuil, L.; De Keersgieter, A.; Paraschiv, Vasile; Vrancken, C.; Douhard, Bastien; Richard, Olivier; Van Aerde, Steven; Debusschere, I.; Van Houdt, Jan

doi:10.1109/led.2011.2164775

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Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory

Published in IEEE Electron Device Letters • Sep 28, 2011

Authors:

G. Van den bosch

Gouri Sankar Kar

Pieter Blomme

Abstract

A vertical cylindrical SONOS cell with a novel bilayer polysilicon channel down to 22-nm diameter for 3-D NAND Flash memory is successfully developed. We introduce a thin amorphous silicon layer along with the oxide-nitride-oxide (ONO) gate stack inside the memory hole. This silicon layer protects t...

Subject

NAND gate

Stack (abstract data type)

Materials science

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