Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2

Bulk MoS${}_{2}$, a prototypical layered transition-metal dichalcogenide, is an indirect band gap semiconductor. Reducing its slab thickness to a monolayer, MoS${}_{2}$ undergoes a transition to the direct band semiconductor. We support this experimental observation by first-principle calculations a... View More