Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Lelarge, F.; Dagens, B.; Renaudier, Jérémie; Brenot, R.; Accard, A.; Van Dijk, Frdric; Maké, D.; Le Gouézigou, O.; Provost, Jean-Guy; Poingt, F.; Landreau, J.; Drisse, O.; Derouin, E.; Rousseau, Benjamin; Pommereau, Frdric; Duan, Guang–Hua

doi:10.1109/jstqe.2006.887154

Public

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

Published in IEEE Journal of Selected Topics in Quantum Electronics • Jan 1, 2007

Authors:

F. Lelarge

B. Dagens

Jérémie Renaudier

Abstract

This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in optical communication. We investigate both InAs/InP dashes in a barrier and dashes in a well (DWELL) heterostructures operating at 1.5 $\mu$m...

Subject

Lasing threshold

Laser

Optoelectronics

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