Basic principles of STT-MRAM cell operation in memory arrays

V. Khvalkovskiy, A.; Apalkov, Dmytro; Watts, Steven; V. Chepulskii, Roman; S. Beach, R.; Ong, A.; Tang, X.; Driskill-Smith, A.; H. Butler, W.; B. Visscher, P.; K. Lottis, D.; Chen, E; Nikitin, V.; Krounbi, M.

doi:10.1088/0022-3727/46/7/074001

Public

Basic principles of STT-MRAM cell operation in memory arrays

Published in Journal of Physics D Applied Physics • Feb 1, 2013

Authors:

A. V. Khvalkovskiy

Dmytro Apalkov

Steven Watts

Abstract

For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array perfo...

Subject

Magnetoresistive random-access memory

Materials science

Optoelectronics

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