Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Ambacher, O.; E. Foutz, B.; Smart, J.; R. Shealy, J.; Weimann, Nils; Chu, K.; J. Murphy, Michael; Sierakowski, A.J.; J. Schaff, W.; Eastman, L.F.; Dimitrov, R.; Mitchell, Arnan; Stutzmann, M.

doi:10.1063/1.371866

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Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Published in Journal of Applied Physics • Jan 1, 2000

Authors:

O. Ambacher

B. E. Foutz

J. Smart

Abstract

Two dimensional electron gases in AlxGa1−xN/GaN based heterostructures, suitable for high electron mobility transistors, are induced by strong polarization effects. The sheet carrier concentration and the confinement of the two dimensional electron gases located close to the AlGaN/GaN interface are ...

Subject

Materials science

Heterojunction

Wide-bandgap semiconductor

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