InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

GaN-nanocolumn-based InGaN/GaN multiple quantum disk (MQD) light-emitting diodes (LEDs) with a novel columnar structure were fabricated on n-type (111) Si substrates. The n-GaN and InGaN/GaN MQD active region had isolated columnar structures, while the diameters were gradually increased in the p-GaN... View More