A Planar-Gate High-Conductivity IGBT (HiGT) With Hole-Barrier Layer

Mori, Mutsuhiro; Oyama, Kazuhiro; Arai, Taiga; Sakano, J.; Nishimura, Yoshitaka; Masuda, Koutarou; Saito, Katsuaki; Uchino, Yoshihiro; Homma, H.

doi:10.1109/ted.2007.895874

Public

A Planar-Gate High-Conductivity IGBT (HiGT) With Hole-Barrier Layer

Published in IEEE Transactions on Electron Devices • Jun 1, 2007

Authors:

Mutsuhiro Mori

Kazuhiro Oyama

Taiga Arai

Abstract

A high-conductivity insulated gate bipolar transistor (IGBT) (HiGT) with a double diffused MOS structure and an n-type hole-barrier layer surrounding a p-layer (planar HiGT) is presented. The hole-barrier layer prevents the holes from flowing into the p-layer and stores them in the n-layer. The plan...

Subject

Insulated-gate bipolar transistor

Materials science

Saturation current

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