Highly tensile strained silicon–carbon alloys epitaxially grown into recessed source drain areas of NMOS devices

Growth of high quality Si 1− y − z C y P z (SiCP) with high substitutional carbon levels has been demonstrated. Growth rates up to 82 nm min −1 (at 550 °C) led to films incorporating up to 3.6% substitutional carbon [C] VL according to Vegard's law (VL) or 2.8% [C] KB after Kelieres/Berti (KB). The ... View More