Doping of SiC by Implantation of Boron and Aluminum

Experimental studies on aluminum (Al) and boron (B) implantation in 4H/6H SiC are reported; the implantation is conducted at room temperature or elevated temperatures (500 to 700 °C). Both Al and B act as “shallow” acceptors in SiC. The ionization energy of these acceptors, the hole mobility and the... View More