Noise modeling for RF CMOS circuit simulation

Scholten, A.J.; Tiemeijer, L.F.; van Langevelde, R.; Havens, R.J.; Zegers-van Duijnhoven, A.T.A.; C. Venezia, V.

doi:10.1109/ted.2003.810480

Public

Noise modeling for RF CMOS circuit simulation

Published in IEEE Transactions on Electron Devices • Mar 1, 2003

Authors:

A.J. Scholten

L.F. Tiemeijer

R. van Langevelde

Abstract

The RF noise in 0.18-/spl mu/m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the...

Subject

Shot noise

Noise (video)

CMOS

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