Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

Müller, Johannes; Polakowski, P.; Mueller, Stefan; Mikolajick, Thomas

doi:10.1149/2.0081505jss

Public

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

Published in ECS Journal of Solid State Science and Technology • Jan 1, 2015

Authors:

Johannes Müller

P. Polakowski

Stefan Mueller

Abstract

Bound to complex perovskite systems, ferroelectric random access memory (FRAM) suffers from limited CMOS-compatibility and faces severe scaling issues in today's and future technology nodes. Nevertheless, compared to its current-driven non-volatile memory contenders, the field-driven FRAM excels in ...

Subject

Ferroelectricity

Materials science

Scalability

Research Assistant

AI chat, annotations, notes & similar papers

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!