Review on high-k dielectrics reliability issues
Published in IEEE Transactions on Device and Materials Reliability • Mar 1, 2005
Authors:,,
G. Ribes
Jérôme Mitard
M. Denais
Abstract
High-k gate dielectrics, particularly Hf-based materials, are likely to be implemented in CMOS advanced technologies. One of the important challenges in integrating these materials is to achieve lifetimes equal or better than their SiO/sub 2/ counterparts. In this paper we review the status of relia...
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