Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

Subramanian, V.; Parvais, Bertrand; Borremans, Jonathan; Mercha, A.; Linten, Dimitri; Wambacq, Piet; Loo, Josine; Dehan, M.; Gustin, C.; Collaert, Nadine; Kubicek, Stefan; J. P. Lander, Robert; C. Hooker, Jacob; Cubaynes, F.N.; Donnay, Stéphane; Jurczak, M.; Groeseneken, G.; Sansen, Willy; Decoutere, Stefaan

doi:10.1109/ted.2006.885649

Public

Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

Published in IEEE Transactions on Electron Devices • Dec 1, 2006

Authors:

V. Subramanian

Bertrand Parvais

Jonathan Borremans

Abstract

Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting tradeoff in the analog/RF design space. It is found that FinFETs possess the following key advantages over bulk MOSFETs: reduced leakage, excellent subthreshold slope, and better voltage gain ...

Subject

Transconductance

Subthreshold conduction

MOSFET

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