Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

Dimroth, Frank; Grave, M.; Beutel, Paul; Fiedeler, Ulrich; Karcher, Christian; Tibbits, T.N.D.; Oliva, Eduard; Siefer, Gerald; Schachtner, Michael; Wekkeli, A.; W. Bett, Andreas; Krause, R.; Piccin, M.; Blanc, Nicolas; Drazek, Charlotte; Guiot, Eric; Ghyselen, B.; Salvetat, T.; Tauzin, A.; Signamarcheix, Thomas; Dobrich, Anja; Hannappel, Thomas; Schwarzburg, Klaus

doi:10.1002/pip.2475

Public

Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

Published in Progress in Photovoltaics Research and Applications • Jan 13, 2014

Authors:

Frank Dimroth

M. Grave

Paul Beutel

Abstract

ABSTRACT Triple‐junction solar cells from III–V compound semiconductors have thus far delivered the highest solar‐electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap ener...

Subject

Optoelectronics

Band gap

Solar cell

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