Atomic layer deposition of a MoS <sub>2</sub> film

Kheng Tan, Lee; Liu, Bo; Teng, Jinghua; Guo, Shifeng; Yee Low, Hong; Ping Loh, Kian

doi:10.1039/c4nr02451f

Public

Atomic layer deposition of a MoS 2 film

Published in Nanoscale • Jan 1, 2014

Authors:

Lee Kheng Tan

Bo Liu

Jinghua Teng

Abstract

A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl₅ and H₂S. A post-deposition...

Subject

Atomic layer deposition

Layer (electronics)

Deposition (geology)

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