Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography

Three-dimensional dopant distributions in actual n- and p-channel metal–oxide–semiconductor devices of 65 nm node in two kinds of commercially available products were investigated by atom probe tomography (APT). Detailed and quantitative dopant distributions in gate, gate oxide, and channel regions ... View More