Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe<sub>2</sub> versus MoS<sub>2</sub>

Tongay, Sefaattin; Zhou, Jian; Ataca, Can; Lo, Kelvin; S. Matthews, Tyler; Li, Jingbo; C. Grossman, Jeffrey; Wu, Junqiao

doi:10.1021/nl302584w

Public

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

Published in Nano Letters • Oct 25, 2012

Authors:

Sefaattin Tongay

Jian Zhou

Can Ataca

Abstract

Layered semiconductors based on transition-metal chalcogenides usually cross from indirect bandgap in the bulk limit over to direct bandgap in the quantum (2D) limit. Such a crossover can be achieved by peeling off a multilayer sample to a single layer. For exploration of physical behavior and devic...

Subject

Band gap

Semiconductor

Materials science

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