Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

Riedl, Christian; Coletti, Camilla; Iwasaki, Takayuki; Zakharov, Alexei; Starke, Ulrich

doi:10.1103/physrevlett.103.246804

Public

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

Published in Physical Review Letters • Dec 10, 2009

Authors:

Christian Riedl

Camilla Coletti

Takayuki Iwasaki

Abstract

Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 square root(3) x 6 square root(3))R30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound ...

Subject

Graphene

Intercalation (chemistry)

Monolayer

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