XPS study of BN thin films deposited by CVD on SiC plane substrates

Guímon, C.; Gonbeau, D.; Pfister‐Guillouzo, G.; Dugne, O.; Guette, A.; Naslain, R.; Lahaye, M.

doi:10.1002/sia.740160191

Public

XPS study of BN thin films deposited by CVD on SiC plane substrates

Published in Surface and Interface Analysis • Jul 1, 1990

Authors:

C. Guímon

D. Gonbeau

G. Pfister‐Guillouzo

Abstract

Abstract BN films deposited from a BF 3 NH 3 precursor, under chemical vapour infiltration conditions, on plane sintered α‐SiC substrates were analysed by XPS. The films are non‐stoichiometric with an N/B atomic ratio of <1. They also contain significant amounts of oxygen atoms, homogeneously distr...

Subject

X-ray photoelectron spectroscopy

Stoichiometry

Ternary operation

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