Resistive Switching Behavior in Organic–Inorganic Hybrid CH 3 NH 3 PbI 3 −x Cl x Perovskite for Resistive Random Access Memory Devices

The CH3 NH3 PbI3- x Clx organic-inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3 NH3 PbI3- x Clx /FTO structure is fabricated by a low-temperature, solution-process... View More