Topological Insulator Thin Films of Bi<sub>2</sub>Te<sub>3</sub> with Controlled Electronic Structure

Wang, Guang; Zhu, Xiegang; Sun, Yi‐Yang; Li, Yaoyi; Zhang, Tong; Wen, Jing; Chen, Xi; He, Ke; Wang, Lili; Ma, Xu‐Cun; Jia, Jin‐Feng; Zhang, Shengbai; Xue, Qi‐Kun

doi:10.1002/adma.201100678

Public

Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure

Published in Advanced Materials • May 4, 2011

Authors:

Guang Wang

Xiegang Zhu

Yi‐Yang Sun

Abstract

Topological insulator thin films of Bi2Te3 with controlled electronic structure can be grown by regulating the molecular beam epitaxy (MBE) growth kinetics without any extrinsic doping. N- to p-type conversion results from the change in the concentrations of TeBi donors and BiTe acceptors. This repr...

Subject

Molecular beam epitaxy

Topological insulator

Materials science

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!