Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes

C. Casey, H.; F. Muth, John; Krishnankutty, S.; M. Zavada, J.

doi:10.1063/1.116351

Public

Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes

Published in Applied Physics Letters • May 13, 1996

Authors:

H. C. Casey

John F. Muth

S. Krishnankutty

Abstract

Measurement of the room temperature forward bias current-voltage behavior of InGaN/AlGaN double heterostructure blue light-emitting diodes demonstrates a significant departure from the usual Is exp(qV/ nkT) behavior where n is the ideality factor which varies between 1 and 2. The observed current-vo...

Subject

Electroluminescence

Quantum tunnelling

Heterojunction

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