EUV High-NA scanner and mask optimization for sub 8 nm resolution

van Schoot, Jan; van Ingen Schenau, Koen; Bottiglieri, Gerardo; Troost, Kars; Zimmerman, John; Migura, Sascha; Kneer, Bernhard; Timo Neumann, Jens; Kaiser, Winfried

doi:10.1117/12.2202258

Public

EUV High-NA scanner and mask optimization for sub 8 nm resolution

Published in Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE • Nov 16, 2015

Authors:

Jan van Schoot

Koen van Ingen Schenau

Gerardo Bottiglieri

Abstract

EUV lithography for resolution below 8 nm half pitch requires the numerical aperture (NA) of the projection lens to be significantly larger than the current state-of-the-art 0.33NA. In order to be economically viable, a throughput in the range of 100 wafers per hour is needed. As a result of the inc...

Subject

Extreme ultraviolet lithography

Optics

Scanner

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!