Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals

The increased number of carrier pockets near the Fermi level and the optimized carrier concentration in doped SnSe single crystal can lead to a high average ZT ave ∼ 1.2 from 300 K to 800 K and a peak ZT max value in excess of 2.0 at 800 K along the crystallographic b -axis.