Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

C. M. Knoops, Harm; M. J. Braeken, Eline; de Peuter, Koen; E. Potts, Stephen; Haukka, Suvi; Pore, Viljami; M. M. Kessels, W.

doi:10.1021/acsami.5b06833

Public

Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

Published in ACS Applied Materials & Interfaces • Aug 25, 2015

Authors:

Harm C. M. Knoops

Eline M. J. Braeken

Koen de Peuter

Abstract

Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited...

Subject

Materials science

Silane

Atomic layer deposition

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