Influence of Phosphorous Auto-Doping on the Characteristics of SiO2/SiC Gate Dielectrics

Hung Weng, Ming; Murphy, A.E.; T. Ryan, Craig; J.D. Furnival, Benjamin; A. Smith, Dave; Clark, David; A. Young, Robert; P. Ramsay, Ewan; Thompson, R.; Horsfall, A.B.

doi:10.4028/www.scientific.net/msf.821-823.492

Public

Influence of Phosphorous Auto-Doping on the Characteristics of SiO2/SiC Gate Dielectrics

Published in Materials science forum • Jun 30, 2015

Authors:

Ming Hung Weng

A.E. Murphy

Craig T. Ryan

Abstract

We present the influence of phosphorous auto-doping on the characteristics of the oxide interface in 4H-SiC following high temperature gate oxide annealing. IV characteristics show no evidence of direct tunnelling breakdown; however Fowler Nordheim (F-N) conduction is observed in high electric field...

Subject

Materials science

Doping

Dielectric

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!