Influence of Phosphorous Auto-Doping on the Characteristics of SiO&lt;sub&gt;2&lt;/sub&gt;/SiC Gate Dielectrics

Hung Weng, Ming; Murphy, A.E.; T. Ryan, Craig; J.D. Furnival, Benjamin; A. Smith, Dave; Clark, David; A. Young, Robert; P. Ramsay, Ewan; Thompson, R.; Horsfall, A.B.

doi:10.4028/www.scientific.net/msf.821-823.492

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Influence of Phosphorous Auto-Doping on the Characteristics of SiO<sub>2</sub>/SiC Gate Dielectrics

Shared by NobleBlocks on Jun 30, 2015 • 12:00 AM UTC

Authors:

Ming Hung Weng

A.E. Murphy

Craig T. Ryan

Abstract

We present the influence of phosphorous auto-doping on the characteristics of the oxide interface in 4H-SiC following high temperature gate oxide annealing. IV characteristics show no evidence of direct tunnelling breakdown; however Fowler Nordheim (F-N) conduction is observed in high electric field...

Subject

Materials science

Doping

Dielectric

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