High Temperature CMOS Circuits on Silicon Carbide

P. Ramsay, Ewan; Breeze, James; Clark, David; Murphy, A.E.; J. Smith, David; Thompson, R.; Wright, Sean; A. Young, Robert; B. Horsfall, Alton

doi:10.4028/www.scientific.net/msf.821-823.859

Public

High Temperature CMOS Circuits on Silicon Carbide

Published in Materials science forum • Jun 30, 2015

Authors:

Ewan P. Ramsay

James Breeze

David Clark

Abstract

This paper presents the characteristics and performance of a range of Silicon Carbide (SiC) CMOS integrated circuits fabricated using a process designed to operate at temperatures of 300°C and above. The properties of Silicon carbide enable both n-channel and p-channel MOSFETS to operate at temperat...

Subject

CMOS

Materials science

Electronic circuit

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