Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Alcotte, Reynald; Martin, M.; Moeyaert, J.; Cipro, R.; David, Sylvain; Bassani, F.; Ducroquet, F.; Bogumilowicz, Y.; Sánchez, E.; Ye, Z.; Bao, Xinyu; Pin, Jean-Baptiste; Baron, T.

doi:10.1063/1.4945586

Public

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Published in APL Materials • Apr 1, 2016

Authors:

Reynald Alcotte

M. Martin

J. Moeyaert

Abstract

Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of th...

Subject

Epitaxy

Materials science

Chemical vapor deposition

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