Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO2 Related High-k Dielectrics Interfaces

Shiraishi, Kenji; Torii, Kazuyoshi; Akasaka, Y.; Nakayama, Takashi; Nakaoka, Takashi; Miyazaki, Seiichi; Chikyow, Toyohiro; Yamada, Keisaku; Nara, Yasuo

doi:10.1149/1.2209298

Public

Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO2 Related High-k Dielectrics Interfaces

Published in ECS Transactions • Jul 7, 2006

Authors:

Kenji Shiraishi

Kazuyoshi Torii

Y. Akasaka

Abstract

We have theoretically investigated poly-Si and metal gates on Hf-related high-k gate dielectrics. First, we have investigated the cause of the substantial threshold voltage (Vth) shifts observed in Hf-related high-k gate stacks with p+poly-Si gates. The oxygen vacancy (Vo) level in ionic HfO2 is loc...

Subject

Materials science

High-κ dielectric

Dielectric

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