Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p–n junctions

Abstract We evaluate the proposed resonant terahertz (THz) detectors on the basis of field-effect transistors (FETs) with split gates, electrically induced lateral p–n junctions, uniform graphene layer (GL) or perforated (in the p–n junction depletion region) graphene layer (PGL) channel. The perfor... View More