Physical Mechanisms behind the Field‐Cycling Behavior of HfO<sub>2</sub>‐Based Ferroelectric Capacitors

Pešić, Milan; P. G. Fengler, Franz; Larcher, Luca; Padovani, Andrea; Schenk, Tony; D. Grimley, Everett; Sang, Xiahan; M. LeBeau, James; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

doi:10.1002/adfm.201600590

Public

Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors

Published in Advanced Functional Materials • May 6, 2016

Authors:

Milan Pešić

Franz P. G. Fengler

Luca Larcher

Abstract

Novel hafnium oxide (HfO 2 )‐based ferroelectrics reveal full scalability and complementary metal oxide semiconductor integratability compared to perovskite‐based ferroelectrics that are currently used in nonvolatile ferroelectric random access memories (FeRAMs). Within the lifetime of the device, t...

Subject

Materials science

Ferroelectricity

Polarization (electrochemistry)

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