Electrografted P4VP for High Aspect Ratio Copper TSV Insulation in Via-Last Process Flow

Via-Last metallization of High Aspect Ratio Through Silicon Via (HAR TSV) for 3D integration is challenging. Indeed, the formation of a uniform and conformal dielectric to insulate HAR TSVs in Via-Last process flow is difficult to achieve for any physical deposition process. In this study, we presen... View More