Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices

Hung Weng, Ming; Idzdihar Idris, Muhammad; Khee Chan, Hua; Murphy, A.E.; A. Smith, Dave; Clark, David; Young, R.A.R.; P. Ramsay, Ewan; B. Horsfall, Alton

doi:10.4028/www.scientific.net/msf.858.631

Public

Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices

Published in Materials science forum • May 24, 2016

Authors:

Ming Hung Weng

Muhammad Idzdihar Idris

Hua Khee Chan

Abstract

We demonstrate the influence of enhancing the dielectric film used to form the gate in complimentary MOS circuits, designed for high temperature operation. The data show that the characteristics of both n-MOS and p-MOS capacitors and transistors have degraded capacitance characteristics in terms of ...

Subject

PMOS logic

Materials science

NMOS logic

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